Characteristics of indium-gallium-nitride multiple-quantum-well blue laser diodes grown by MOCVD

Journal of Crystal Growth

Volumn 189-190, Issue , 1998, Pages 837-840

  Mack, M P ^a,b   Abare, A C ^a   Hansen, M ^a   Kozodoy, P ^a   Keller, S ^a   Mishra, U ^a   Coldren, L A ^a   DenBaars, S P ^a  

^a University of California   (United States)

^b AIR FORCE RESEARCH LABORATORY   (United States)

Author keywords

GaN; InGaN; Laser diode; MQW

Indexed keywords

ATMOSPHERIC PRESSURE; CURRENT DENSITY; ETCHING; LASER PULSES; LIGHT EMISSION; LIGHT POLARIZATION; METALLORGANIC CHEMICAL VAPOR DEPOSITION; PHASE TRANSITIONS; SAPPHIRE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR GROWTH; SUBSTRATES;

MULTIQUANTUM WELL (MQW) LASER DIODES; ROOM TEMPERATURE (RM) PULSED OPERATIONS;

QUANTUM WELL LASERS;

EID: 0032092947     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(98)00305-4     Document Type: Article

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