Study on sapphire surface preparation for III-nitride heteroepitaxial growth by chemical treatments

Journal of the Electrochemical Society

Volumn 149, Issue 11, 2002, Pages

  Dwikusuma, F ^a   Saulys, D ^a   Kuech, T F ^a  

^a University of Wisconsin Madison   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; ATOMIC FORCE MICROSCOPY; CRYSTALLINE MATERIALS; EPITAXIAL GROWTH; ETCHING; MIXTURES; MORPHOLOGY; NITRIDES; SAPPHIRE; SULFURIC ACID; SURFACE CHEMISTRY; THERMAL EFFECTS;

CHEMICAL TREATMENT; HETEROEPITAXIAL GROWTH; SURFACE DAMAGE; SURFACE PREPARATION;

SURFACE TREATMENT;

EID: 0036862534     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1509072     Document Type: Article

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