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Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 44, Issue 5 A, 2005, Pages 2921-2924

Vertical electrode GaN-based light-emitting diode fabricated by selective wet etching technique

(1) Kim, Seong Jin a

a Itswell Co Ltd (South Korea)

Author keywords

InGaN GaN; LED; MOCVD; Receptor; Sapphire; Vertical electrode

Indexed keywords

ELECTRIC BREAKDOWN; ELECTRODES; ELECTROSTATICS; EPITAXIAL GROWTH; ETCHING; GALLIUM NITRIDE; METALLORGANIC CHEMICAL VAPOR DEPOSITION; NUCLEATION; SAPPHIRE; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR QUANTUM WELLS;

INGAN/GAN; RECEPTOR; VERTICAL ELECTRODE; WET ETCHING;

LIGHT EMITTING DIODES;

EID: 22544446448 PISSN: 00214922 EISSN: None Source Type: Journal
DOI: 10.1143/JJAP.44.2921 Document Type: Article

Times cited : (30)

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