Cavity length effects on internal loss and quantum efficiency of multiquantum-well lasers

IEEE Journal on Selected Topics in Quantum Electronics

Volumn 5, Issue 3, 1999, Pages 643-647

  Piprek, Joachim ^a,b,c   Abraham, Patrick ^a,c   Bowers, John E ^a,d  

^a University of California   (United States)

^b HUMBOLDT UNIVERSITY   (Germany)

^c UNIVERSITY OF CALIFORNIA   (United States)

^d STANFORD UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; COMPUTER SIMULATION; ERROR ANALYSIS; LIGHT MEASUREMENT; NUMERICAL ANALYSIS; QUANTUM EFFICIENCY; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR DEVICE MODELS; TEMPERATURE; WAVEGUIDES;

CARRIER RECOMBINATION LOSSES; CAVITY LENGTH EFFECTS; CURRENT CURVES; DIFFERENTIAL INTERNAL EFFICIENCY; INVERSE SLOPE EFFICIENCY; LASER CAVITY LENGTH; LOSS MECHANISMS; OPTICAL LOSSES; QUANTUM WELL DEVICES; SEMICONDUCTING INDIUM GALLIUM ARSENIDE PHOSPHIDE;

QUANTUM WELL LASERS;

EID: 0033123728     PISSN: 1077260X     EISSN: None     Source Type: Journal    
DOI: 10.1109/2944.788430     Document Type: Article

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