Novel design scheme for high-speed MQW lasers with enhanced differential gain and reduced carrier transport effect

IEEE Journal of Quantum Electronics

Volumn 34, Issue 12, 1998, Pages 2340-2349

  Matsui, Yasuhiro ^a   Murai, Hitoshi ^b,c   Arahira, Shin ^b   Ogawa, Yoh ^b   Suzuki, Akira ^a  

^a WASEDA UNIVERSITY   (Japan)

^b OKI ELECTRIC INDUSTRY CO   (Japan)

^c TOHOKU UNIVERSITY   (Japan)

Author keywords

Carrier; Compensation; High speed devices; Quantum well lasers; Strain; Transport

Indexed keywords

BANDWIDTH; CARRIER MOBILITY; ELECTRODYNAMICS; ELECTRONIC DENSITY OF STATES; ENERGY GAP; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; STRAIN; WAVE EQUATIONS;

CARRIER TRANSPORT EFFECTS; DIFFERENTIAL GAIN; HIGH SPEED LASERS;

QUANTUM WELL LASERS;

EID: 0032292252     PISSN: 00189197     EISSN: None     Source Type: Journal    
DOI: 10.1109/3.736104     Document Type: Article

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