Enhanced modulation bandwidth for strain-compensated InGaAlAs-InGaAsP MQW lasers

IEEE Journal of Quantum Electronics

Volumn 34, Issue 10, 1998, Pages 1970-1978

  Matsui, Yasuhiro ^a   Murai, Hitoshi ^b   Arahira, Shin ^b   Ogawa, Yoh ^b   Suzuki, Akira ^a  

^a WASEDA UNIVERSITY   (Japan)

^b OKI ELECTRIC INDUSTRY CO   (Japan)

Author keywords

Carrier; Compensation; High speed devices; Quantum well lasers; Strain; Transport

Indexed keywords

BANDWIDTH; CARRIER CONCENTRATION; LIGHT MODULATION; QUANTUM EFFICIENCY; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR GROWTH; SEMICONDUCTOR QUANTUM WELLS;

STRAIN COMPENSATION MULTIPLE-QUANTUM-WELL (SC-MQW) LASERS;

QUANTUM WELL LASERS;

EID: 0032186578     PISSN: 00189197     EISSN: None     Source Type: Journal    
DOI: 10.1109/3.720235     Document Type: Article

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