Design optimization of InGaAsP-InGaAlAs 1.55 μm strain-compensated MQW lasers for direct modulation applications

Semiconductor Science and Technology

Volumn 19, Issue 5, 2004, Pages 615-625

  Akram, M Nadeem ^a   Silfvenius, Christofer ^a   Kjebon, Olle ^a   Schatz, Richard ^a  

^a ROYAL INSTITUTE OF TECHNOLOGY   (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

BANDWIDTH; DESIGN; METALLORGANIC VAPOR PHASE EPITAXY; MODULATION; OPTICAL COMMUNICATION; OPTIMIZATION; PHOTOLUMINESCENCE; QUANTUM WELL LASERS; SEMICONDUCTOR LASERS; SEMICONDUCTOR QUANTUM WELLS; TENSILE STRESS;

DIFFERENTIAL GAIN; LIGHT-WAVE FUNCTIONS; MATERIAL GAIN; OPTICAL FIBRE TELECOMMUNICATION SYSTEMS;

SEMICONDUCTING INDIUM COMPOUNDS;

EID: 2542481881     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/19/5/010     Document Type: Article

References (33)

1. Matsui Y, Murai H, Arahira S, Kutsuzawa S and Ogawa Y 1997 30-GHz bandwidth 1.55-μm strain-compensated InGaAlAs-InGaAsP MQW laser IEEE Photon. Technol. Lett. 9 25-7
2. Kjebon O, Schatz R, Lourdudoss S, Nilsson S and Backbom B S L 1997 30 GHz direct modulation bandwidth in detuned loaded InGaAsP DBR lasers at 1.55 μm wavelength Electron. Lett. 33 488-9
3. Kjebon O, Akram M N and Schatz R 2003 40 Gb/s transmission experiment using directly modulated 1.55 μm DBR lasers Indium Phosphide and Related Materials (Piscataway, NJ: IEEE) pp 495-8
4. Kjebon O, Schatz R, Carlson C and Akram M N 2002 Experimental evaluation of detuned loading effects on distortion in edge emitting DBR lasers International Topical Meeting on Microwave Photonics pp 125-8
5. Ishikawa T and Bowers J E 1994 Band lineup and in-plane effective mass of InGaAsP or InGaAlAs on InP strained layer quantum well IEEE J. Quantum Electron. 30 562-70
6. Piprek J, Abraham P and Bowers J E 1999 Carrier non-uniformity effects on the internal efficiency of multiquantum well laser Appl. Phys. Lett. 74 489-91
7. Piprek J, Abraham P and Bowers J E 2000 Self-consistent analysis of high-temperature effects on strained-Iayer multiquantum-well InGaAsP-InP lasers IEEE J. Quantum Electron. 36 366-74
8. 0.19P electron stopper layer Semicond. Sci. Technol. 14 419-24
9. Piprek J, White J K and SpringThorpe A J 2002 What limits the maximum output power of long-wavelength AlGaInAs/InP laser diodes? IEEE J. Quantum Electron. 38 1253-9
10. Matsui Y, Murai H, Arahira S, Ogawa Y and Suzuki A 1998 Novel design scheme for high-speed MQW lasers with enhanced differential gain and reduced carrier transport effect IEEE J. Quantum Electron. 34 2340-9
11. Silfvenius C, Landgren G and Marcinkevicius S 1999 Hole distribution in InGaAsP 1.3 μm multiple quantum well laser structures with different hole confinement energies IEEE J. Quantum Electron. 35 603-7
12. Ghiti A and Ekenberg U 1994 Improved laser performance due to spatial separation of heavy and light-hole states in compressive and tensile strained structures Semicond. Sci. Technol. 9 1575-9
13. Coldren L A and Corzine S W 1995 Diode Lasers and Photonic Integrated Circuits (New York: Wiley)
14. Kjebon O, Schatz R, Lourdudoss S, Nilsson S and Stålnacke B 1996 Modulation response measurements and evaluation of MQW InGaAsP lasers of various designs High Speed Semicond. Laser Sources 2684 138-52
15. Grabmaier A, Hangleiter A and Fuchs G 1991 Low nonlinear gain in InGaAs/InGaAlAs separate confinement multiquantum well laser Appl. Phys. Lett. 59 3024-6
16. Li Z-M, Dzurko K M, Delage A and McAlister S P 1992 A self-consistent two dimensional model of quantum well semiconductor lasers: optimization of a GRIN-SCH SQW laser structure IEEE J. Quantum Electron. 28 792-803
17. LASTIP Users's Manual 2002 http://www.crosslight.com
18. Seko Y and Sakamoto A 2001 Valence subband structures and optical properties of strain-compensated quantum wells Japan. J. Appl. Phys. 40 34-9
19. Seki S, Yamanaka T, Lui W and Yokoyama K 1994 Theoretical analysis of differential gain of 1.55 μm InGaAsP/InP compressive strained multiple quantum well lasers J. Appl. Phys. 75 1299-303
20. Chuang S L 1995 Physics of Optoelectronic Devices (Wiley series in Pure and Applied Optics) (New York: Wiley)
21. Fröjdh K and Marcinkevicius S 1996 Interwell carrier transport in InGaAsP multiple quantum well laser structures Appl. Phys. Lett. 69 3695-7
22. yAs long-wavelength strained quantum-well lasers IEEE J. Quantum Electron. 35 771-82
23. Vurgaftman I, Meyer J R and Ram-Mohan L R 2001 Band parameters for III-V compound semiconductors and their alloys Appl. Phys. Rev. 89 5815-75
24. 0.47As, N-n heterojunction by C-V profiling Appl. Phys. Lett. 43 118-20
25. 1-xAs grown on InP Appl. Phys. Lett. 54 739
26. yAs/InP hetero-structures Phys. Rev. B 47 6439-43
27. Bae S-J, Park S-H and Lee Y-T 2002 Bandgap effects of quantum well active layer on threshold current density, differential gain and temperature characteristics of 1.3 μm InGaAlAs-InP quantum well lasers Japan. J. Appl. Phys. 41 1354-8
28. Issanchou O, Barrau J, Idiart-Alhor E and Quillec M 1995 Theoretical comparison of GaInAs/GaAlInAs and GaInAs/GaInAsP quantum-well lasers J. Appl. Phys. 6 3925-30
29. Xu M L, Tan G L, Xu J M, Irikawa M, Shimizu H, Fukushima T, Hirayama Y and Mand R S 1995 Ultra-high differential gain in GaInAs-AlGaInAs quantum wells: experiment and Modeling IEEE Photon. Technol. Lett. 7 947-9
30. Matsui Y, Murai H, Arahira S, Ogawa Y and Suzuki A 1998 Enhanced modulation bandwidth for strain-compensated InGaAlAs-InGaAsP MQW lasers IEEE J. Quantum Electron. 34 1970-8
31. Alam M A, Hybertsen M S, Smith R K and Baraff G A 2000 Simulation of semiconductor quantum well lasers IEEE Trans. Electron Devices 47 1917-25
32. Silfvenius C and Kjebon O unpublished
33. Stegmuller B, Borchert B and Gessner R 1993 1.57 μm strained layer quantum well GaInAlAs ridge waveguide laser diodes with high temperature (130°) and ultrahigh speed (17 GHz) performance IEEE Photon. Technol. Lett. 5 597-9