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Journal of Electronic Materials

Volumn 30, Issue 8, 2001, Pages 972-976

Dopant diffusion and current-voltage studies on epitaxial InP codoped with Ru and Fe

(6) Soderstrom D a Lourdudoss, S a Dadgar, A b Stenzel, O b Bimberg, D b Schumann, H b

a ROYAL INSTITUTE OF TECHNOLOGY (Sweden)

b TECHNISCHE UNIVERSITÄT BERLIN (Germany)

Author keywords

Dopant diffusion; InP:Fe; Low pressure hydride VPE; Ru

Indexed keywords

CONCENTRATION (PROCESS); DIFFUSION; IRON; RUTHENIUM; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTOR DOPING; VAPOR PHASE EPITAXY;

EPITAXIAL LAYERS;

SEMICONDUCTING INDIUM PHOSPHIDE;

EID: 0035415631 PISSN: 03615235 EISSN: None Source Type: Journal
DOI: 10.1007/BF02657719 Document Type: Article

Times cited : (1)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.