Hole distribution in InGaAsP 1.3-μm multiple-quantum-well laser structures with different hole confinement energies

IEEE Journal of Quantum Electronics

Volumn 35, Issue 4, 1999, Pages 603-607

  Silfvenius, Christofer ^a   Landgren, Gunnar ^a   Marcinkevicius, Saulius ^a  

^a ROYAL INSTITUTE OF TECHNOLOGY   (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER MOBILITY; ELECTRON TRANSPORT PROPERTIES; HOLE TRAPS; PHOTOLUMINESCENCE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR DEVICE STRUCTURES; THERMIONIC EMISSION;

INDIUM GALLIUM ARSENIDE PHOSPHIDE;

QUANTUM WELL LASERS;

EID: 0032650912     PISSN: 00189197     EISSN: None     Source Type: Journal    
DOI: 10.1109/3.753665     Document Type: Article

References (13)

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