30-GHz bandwidth 1.55-μm strain-compensated InGaAlAs-InGaAsP MQW laser

IEEE Photonics Technology Letters

Volumn 9, Issue 1, 1997, Pages 25-27

  Matsui, Yasuhiro ^a   Murai, Hitoshi ^b   Arahira, Shin ^b   Kutsuzawa, Satoko ^b   Ogawa, Yoh ^b  

^a WASEDA UNIVERSITY   (Japan)

^b OKI ELECTRIC INDUSTRY CO   (Japan)

Author keywords

Damping factor; Modulation characteristics; Multiple quantum well; Semiconductor laser diodes; Strain compensation

Indexed keywords

BAND STRUCTURE; CHARGE CARRIERS; ELECTRON TRANSPORT PROPERTIES; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR QUANTUM WELLS;

DAMPING FACTOR; MODULATION CHARACTERISTICS; STRAIN COMPENSATED MULTIPLE QUANTUM WELL (MQW) LASERS; STRAIN COMPENSATION;

QUANTUM WELL LASERS;

EID: 0030735127     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/68.554159     Document Type: Article

References (7)

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