Vertical carrier transport in InGaAsP multiple-quantum-well laser structures: Effect of p-doping

IEEE Journal on Selected Topics in Quantum Electronics

Volumn 3, Issue 2, 1997, Pages 315-319

  Tessler, Nir ^a   Marcinkevičius, Saulius ^b,d,e   Olin, Ulf ^b,c   Silfvenius, Christofer K V ^b,f   Stålnacke, Björn F ^b,f   Landgren, Gunnar ^b,g,h,i  

^a UNIVERSITY OF CAMBRIDGE   (United Kingdom)

^b ROYAL INSTITUTE OF TECHNOLOGY   (Sweden)

^c ACREO AB   (Sweden)

^d VILNIUS UNIVERSITY   (Lithuania)

^e CENTER FOR PHYSICAL SCIENCES AND TECHNOLOGY   (Lithuania)

^f LINKÖPING UNIVERSITY   (Sweden)

^g CHALMERS UNIVERSITY OF TECHNOLOGY   (Sweden)

^h Swed Institute of Microelectronics   (Sweden)

ⁱ Lab of Semiconductor Materials   (Sweden)

Author keywords

Carrier transport; Quantum well lasers; Time resolved photoluminescence

Indexed keywords

CARRIER CONCENTRATION; CHARGE CARRIERS; ELECTRON TRANSPORT PROPERTIES; LIGHT MODULATION; PHOTOLUMINESCENCE; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR DOPING;

CARRIER TRANSPORT;

QUANTUM WELL LASERS;

EID: 0031108488     PISSN: 1077260X     EISSN: None     Source Type: Journal    
DOI: 10.1109/2944.605673     Document Type: Article

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