Reactively sputtered Mo-V nitride thin films as ternary diffusion barriers for copper metallization

Journal of the Electrochemical Society

Volumn 155, Issue 10, 2008, Pages

  Majumder, Prodyut ^a,c   Takoudis, Christos ^a,b,c  

^a University of Illinois at Chicago   (United States)

^b University of Illinois at Chicago   (United States)

^c ELECTROCHEMICAL SOCIETY

Author keywords

[No Author keywords available]

Indexed keywords

AGGLOMERATION; ANNEALING; COPPER; DIFFRACTION; DIFFUSION; ELECTRIC RESISTANCE; EPITAXIAL GROWTH; FILM GROWTH; HOLOGRAPHIC INTERFEROMETRY; MAGNETRON SPUTTERING; MOLYBDENUM; NITRIDES; OPTICAL DESIGN; REACTIVE SPUTTERING; SEMICONDUCTOR DOPING; SILICON; SPUTTER DEPOSITION; THICK FILMS; VAPOR DEPOSITION;

ANNEALING TEMPERATURES; BARRIER CAPABILITY; BARRIER LAYER; COPPER DIFFUSION; COPPER METALLIZATION; DIFFUSION BARRIER LAYERS; HIGH-TEMPERATURE ANNEALING; NITRIDE THIN FILMS; PYRAMIDAL STRUCTURES; RADIO FREQUENCIES; REACTIVE MAGNETRON SPUTTERING; SI SUBSTRATE; TERNARY DIFFUSION BARRIERS; TERNARY NITRIDE FILMS; X-RAY DIFFRACTION PATTERNS; X-RAY SPECTROSCOPY;

DIFFUSION BARRIERS;

EID: 51849091036     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.2955726     Document Type: Article

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