Copper diffusion in Ti-Si-N layers formed by inductively coupled plasma implantation

Applied Surface Science

Volumn 253, Issue 2, 2006, Pages 530-534

  Ee, Y C ^a,b   Chen, Z ^b   Law, S B ^a   Xu, S ^c   Yakovlev, N L ^d   Lai, M Y ^d  

^a CHARTERED SEMICONDUCTOR MANUFACTURING LTD   (Singapore)

^b NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

^c NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

^d INSTITUTE OF MATERIALS RESEARCH AND ENGINEERING   (Singapore)

Author keywords

Copper diffusion; TiSiN

Indexed keywords

COPPER; DIFFUSION; INDUCTIVELY COUPLED PLASMA; REFRACTORY ALLOYS; SECONDARY ION MASS SPECTROMETRY; TERNARY SYSTEMS;

BARRIER LAYERS; COPPER DIFFUSION; DIFFUSION BARRIERS; SHEET RESISTANCE;

THIN FILMS;

EID: 33845417923     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2005.12.152     Document Type: Article

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