Effect of nitrogen content on the degradation mechanisms of thin Ta-Si-N diffusion barriers for Cu metallization

Thin Solid Films

Volumn 500, Issue 1-2, 2006, Pages 259-267

  Hubner R ^a,d   Hecker, M ^a,c   Mattern, N ^a   Hoffmann, V ^a   Wetzig, K ^a   Heuer, H ^b   Wenzel, Ch ^b   Engelmann, H J ^c   Gehre, D ^c   Zschech, E ^c  

^a IFW DRESDEN   (Germany)

^b DRESDEN UNIVERSITY OF TECHNOLOGY   (Germany)

^c IBM MICROELECTRONICS   (United States)

^d STATE UNIVERSITY OF NEW YORK   (United States)

Author keywords

Cu metallization; Degradation mechanism; Heat treatment; Ta Si N diffusion barrier

Indexed keywords

COPPER; CRYSTALLIZATION; DEGRADATION; DIFFUSION; HEAT TREATMENT; METALLIZING; NITROGEN; SILICA; SILICON NITRIDE; TANTALUM COMPOUNDS; THERMODYNAMIC STABILITY; X RAY DIFFRACTION ANALYSIS;

CU METALLIZATION; DEGRADATION MECHANISM; DIFFUSION BARRIERS;

THIN FILMS;

EID: 31644437457     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2005.11.047     Document Type: Article

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