Properties of W-Ge-N as a diffusion barrier material for Cu

Applied Physics Letters

Volumn 87, Issue 11, 2005, Pages

  Rawal, S ^a   Norton, D P ^a   Anderson, T J ^a   McElwee White, L ^b  

^a University of Florida   (United States)

^b NONE   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AUGER ELECTRON SPECTROSCOPY (AES); BARRIER MATERIALS; DIFFUSION BARRIER; RECRYSTALLIZATION TEMPERATURE;

CRYSTALLINE MATERIALS; DIFFUSION; METALLIZING; SPUTTER DEPOSITION; THERMAL EFFECTS; THIN FILMS;

COPPER;

EID: 24944441775     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2042534     Document Type: Article

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