Influence of nitrogen content on the crystallization behavior of thin Ta-Si-N diffusion barriers

Thin Solid Films

Volumn 468, Issue 1-2, 2004, Pages 183-192

  Hubner R ^a   Hecker, M ^a   Mattern, N ^a   Voss, A ^a   Acker, J ^a   Hoffmann, V ^a   Wetzig, K ^a   Engelmann, H J ^b   Zschech, E ^b   Heuer, H ^c   Wenzel, Ch ^c  

^a IFW DRESDEN   (Germany)

^b IBM MICROELECTRONICS   (United States)

^c DRESDEN UNIVERSITY OF TECHNOLOGY   (Germany)

Author keywords

Cu metallization; Glow discharge optical emission spectroscopy; Ta Si N diffusion barriers; X ray diffraction

Indexed keywords

ANNEALING; COPPER; CRYSTALLIZATION; DIFFUSION; ELECTRIC CONDUCTIVITY; ELECTROMIGRATION; EMISSION SPECTROSCOPY; METALLIZING; MICROPROCESSOR CHIPS; NITROGEN; SILICA; THERMODYNAMIC STABILITY; X RAY DIFFRACTION ANALYSIS;

GLOW DISCHARGE OPTICAL EMISSION SPECTROSCOPY; INTERCONNECT TECHNOLOGY; SHORT-CIRCUIT DIFFUSION; TA-SI-N DIFFUSION BARRIERS;

TANTALUM COMPOUNDS;

EID: 4644310741     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2004.04.026     Document Type: Article

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