W/TiN double layers as barrier system for use in Cu metallization

Microelectronic Engineering

Volumn 37-38, Issue , 1997, Pages 229-236

  Baumann, J ^a   Markert, M ^a   Werner, T ^a   Ehrlich, A ^a   Rennau, M ^a   Kaufmann, Ch ^a   Gessner, T ^a  

^a CHEMNITZ UNIVERSITY OF TECHNOLOGY   (Germany)

Author keywords

Adhesion; Barrier; Cu; Resistivity; Sputtering; Texture; TiN; W

Indexed keywords

ADHESION; ANNEALING; COPPER; ELECTRIC CONDUCTIVITY OF SOLIDS; METALLIC FILMS; METALLIZING; SPUTTER DEPOSITION; TEXTURES; TITANIUM NITRIDE; TUNGSTEN;

BARRIER SYSTEMS; ELECTRICAL BARRIER TESTS;

SEMICONDUCTOR DEVICE MANUFACTURE;

EID: 4243735349     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0167-9317(97)00116-0     Document Type: Article

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