Two-bit SONOS type Flash using a band engineering in the nitride layer

Microelectronic Engineering

Volumn 80, Issue SUPPL., 2005, Pages 256-259

  Chien, Hua Ching ^a   Kao, Chin Hsing ^a   Chang, Jui Wen ^a   Tsai, Tzung Kuen ^a  

^a NATIONAL DEFENSE UNIVERSITY   (Taiwan)

Author keywords

Flash; Non uniform layer; Silicon nitride; SONOS; Trapping device

Indexed keywords

CHARACTERIZATION; CHEMICAL VAPOR DEPOSITION; INTERFACES (MATERIALS); OXIDATION; SILICON NITRIDE; SILICON ON INSULATOR TECHNOLOGY; THIN FILMS;

FLASH; NON-UNIFORM LAYER; SONOS; THERMAL EXCITATION; TRAPPING DEVICE;

FLASH MEMORY;

EID: 19944378108     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2005.04.077     Document Type: Conference Paper

References (6)

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6. B. Kim, and W.S. Hong Use of neural network to characterize a low pressure temperature effect on refractive property of silicon nitride film deposited by PECVD IEEE Transactions on Plasma Science 32 2004 84 89