Characterization of charge traps in metal-oxide-nitride-oxide-semiconductor (MONOS) structures for embedded flash memories

IEEE International Reliability Physics Symposium Proceedings

Volumn , Issue , 2006, Pages 516-522

  Ishida, Takeshi ^a   Okuyama, Yutaka ^a   Yamada, Renichi ^a  

^a HITACHI LTD   (Japan)

Author keywords

Avalanche injection; Distribution; Embedded flash memory; MONOS; Nitride storage; SONOS; Trap

Indexed keywords

AVALANCHE CHARGE INJECTION; EMBEDDED FLASH MEMORY; METAL OXIDE NITRIDE OXIDE SEMICONDUCTORS (MONOS); NITRIDE STORAGE;

CAPACITANCE MEASUREMENT; CHARGE INJECTION; CHARGE TRAPPING; ELECTRON TRAPS; FLASH MEMORY; HOLE TRAPS; VOLTAGE MEASUREMENT;

MOS DEVICES;

EID: 34250753325     PISSN: 15417026     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/RELPHY.2006.251272     Document Type: Conference Paper

References (11)

1. Eli Lusky, Yossi Shacham-Diamand, Assaf Shappir, Ilan Bloom, Guy Cohen, and Boaz Eitan, "Retention Loss Characteristics of Localized charge-trapping devices," in Proc. IRPS, pp.527-530, 2004.
2. Eli Lusky, Yosi Shacham-Diamand, Ilan Bloom, and Boaz Eitan, "Characterization of Channel Hot Electron Injection by the Subthreshold Slope of NROM™ Device," IEEE, Elec. Dev. Lett., Vol.22, pp.556-558, 2001.
3. Hang-Ting Lue, Yen-Hao Shih, Kuang-Yeu Hsieh, Rich Liu, and Chih-Yuan Lu, "A Transient Analysis Method to Characterize the Trap Vertical Location in Nitride-Trapping Devices," IEEE, Elec. Dev. Lett., Vol.25, pp.816-818, 2004.
4. 2-Semiconductor Flash Memory," Appl. Phys. Lett., Vol. 86, 013501, 2005.
5. 2 Semiconductor-type Flash Memory Using Scanning Nonlinear Dielectric Microscopy after Writing-Erasing Cycling," Appl. Phys. Lett., Vol. 86, 063515, 2005.
6. E. H. Nicollian and J. R. Brews, MOS (Metal Oxide Semiconductor) Physics and Technology, John Wiley & Sons, Inc., New-York NY, pp.495-508, 1982.
7. Yu Wang and Marvin H. White, "An Analytical Retention Model for SONOS Nonvolatile Memory Devices in the Excess Electron State", Solid-State Electronics, Vol. 49, pp.97-107, 2005.
8. Tae Hun Kim, Jae Sung Sim, Jong Duk Lee, Hyung Cheol Shin, and Byung-Gook Park, "Charge Decay Characteristics of Silicon-Oxide-Nitride-Oxide-Silicon Structure at Elevated Temperatures and Extraction of the Nitride Trap Density Distribution", Appl. Phys. Lett., Vol. 85, pp.660-662, 2004.
9. Naoto Matsuo and Akio Sasaki, "Electrical Characteristics of Oxide-Nitride-Oxide Films Formed on Tunnel-Structured Stacked Capacitors," IEEE Trans. on Electron Devices, Vol. 42, NO. 7, pp.1340-1343, JULY 1995.
10. Fank R. Libsch and Marvin H. White, "Charge Transport and Storage of Low Programming Voltage SONOS/MONOS Memory Devices", Solid-State Electronics, Vol. 33, pp. 105-126, 1990.
11. S. Manzini, "Electronic Processes in Silicon Nitride", J. Appl. Phys., Vol. 62, pp. 3278-3284, Oct. 1987.