Improving the endurance characteristics through boron implant at active edge in 1 G NAND flash

Annual Proceedings - Reliability Physics (Symposium)

Volumn , Issue , 2007, Pages 652-653

  Kang, Daewoong ^b   Chang, Sungnam ^a   Seo, Seunggun ^a   Song, Yongwook ^a   Yoon, Hojin ^a   Lee, Eunjung ^a   Chang, Dongwon ^a   Lee, Wonseong ^a   Park, Byung Gook ^a   Lee, Jong Duk ^a   Park, Il Han ^a   Kang, Sangwoo ^a   Shin, Hyungcheol ^a  

^a Seoul National University   (South Korea)

^b SAMSUNG Electronics   (South Korea)

Author keywords

Bake retentioin; Boron; Electric field; Endurance; Trap

Indexed keywords

BORON; DOPING (ADDITIVES); ELECTRIC FIELDS; INTERFACES (MATERIALS);

SHALLOW TRENCH ISOLATION (STI); TRAP GENERATION; TUNNEL OXIDE;

FLASH MEMORY;

EID: 34548801917     PISSN: 00999512     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/RELPHY.2007.369996     Document Type: Conference Paper

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