A light emitting diode's chip structure with low stress and high light extraction efficiency

Proceedings - Electronic Components and Technology Conference

Volumn , Issue , 2008, Pages 783-788

  Tan, Liuxi ^a,b   Li, Jia ^a,b   Liu, Zongyuan ^a,b   Wang, Kai ^a,b   Wang, Pei ^a,b   Gan, Zhiying ^a,b   Liu, Sheng ^a,b  

^a HUAZHONG UNIVERSITY OF SCIENCE AND TECHNOLOGY   (China)

^b HUAZHONG UNIVERSITY OF SCIENCE AND TECHNOLOGY   (China)

Author keywords

FEM; LED; Light extraction efficiency; Micro structure; Residual stress

Indexed keywords

CHIP SCALE PACKAGES; COMPUTER NETWORKS; DIODES; ELECTROMAGNETIC WAVES; ELECTRONIC EQUIPMENT MANUFACTURE; ELECTRONICS PACKAGING; EXTRACTION; FINITE ELEMENT METHOD; GALLIUM NITRIDE; LATTICE MISMATCH; LIGHT EMISSION; LIGHT SOURCES; MATERIALS SCIENCE; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MOLECULAR DYNAMICS; OPTICAL PROPERTIES; PHYSICAL OPTICS; RESIDUAL STRESSES; SEMICONDUCTING GALLIUM; STRENGTH OF MATERIALS; THERMAL EXPANSION; THERMAL SPRAYING; THERMAL STRESS;

FEM; LED; LIGHT EXTRACTION EFFICIENCY; MICRO STRUCTURE; RESIDUAL STRESS;

LIGHT EMITTING DIODES;

EID: 51349136364     PISSN: 05695503     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ECTC.2008.4550063     Document Type: Conference Paper

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