Reaction dynamics of H2 on Si. Ab initio supported model calculations

Progress in Surface Science

Volumn 83, Issue 5-6, 2008, Pages 263-336

  Brenig, Wilhelm ^a   Pehlke, Eckhard ^b  

^a TECHNICAL UNIVERSITY OF MUNICH   (Germany)

^b UNIVERSITY OF KIEL   (Germany)

Author keywords

Dissociative adsorption; Hydrogen; Reaction dynamics; Recombinative desorption; Semiconductor surface; Silicon

Indexed keywords

ADSORPTION; CHLORINE COMPOUNDS; DESORPTION; HYDROGEN; HYDROGEN BONDS; METALS; NONMETALS; SILICON;

ADSORPTION/DESORPTION; DETAILED BALANCE; DISSOCIATIVE ADSORPTION; HYDROGEN BONDINGS; HYDROGEN INTERACTIONS; HYDROGEN MOLECULES; INTENSIVE RESEARCH; ORDER-OF MAGNITUDES; QUANTUM DYNAMICAL CALCULATIONS; REACTION DYNAMICS; REACTION MECHANISMS; RECOMBINATIVE DESORPTION; SEMICONDUCTOR SURFACE; SI(001); STICKING COEFFICIENTS; SUBSTRATE TEMPERATURE;

GAS ADSORPTION;

EID: 50849126340     PISSN: 00796816     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.progsurf.2008.06.001     Document Type: Review

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