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Volumn 111, Issue 23, 1999, Pages 10411-10414

Effect of beam energy and surface temperature on the dissociative adsorption of H2 on Si(001)

Author keywords

[No Author keywords available]

Indexed keywords


EID: 0038422453     PISSN: 00219606     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.480395     Document Type: Article
Times cited : (61)

References (26)
  • 19
    • 36449002508 scopus 로고
    • N=297 K are likely due to a forward peaked angular distribution [see: Y.-S. Park, J.-S. Bang, and J. Lee, J. Chem. Phys. 98, 757 (1992)] and the still lower mean translational energy, 〈E〉=50meV, of the thermal gas.
    • (1992) J. Chem. Phys. , vol.98 , pp. 757
    • Park, Y.-S.1    Bang, J.-S.2    Lee, J.3
  • 22
    • 85034123300 scopus 로고    scopus 로고
    • note
    • s) and W= const.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.