Structure sensitive reaction channels of molecular hydrogen on silicon surfaces

Physical Review Letters

Volumn 86, Issue 1, 2001, Pages 123-126

  Durr M ^a   Raschke, M B ^a   Pehlke, E ^b   Hofer U ^a,c  

^a MAX PLANCK INSTITUT FÜR QUANTENOPTIK   (Germany)

^b UNIVERSITY OF DUISBURG ESSEN   (Germany)

^c PHILIPPS UNIVERSITY MARBURG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ADSORPTION; ATOMS; CHEMICAL BONDS; DIMERS; DISSOCIATION; ELECTRONIC STRUCTURE; MOLECULES; PROBABILITY; SECOND HARMONIC GENERATION; SURFACES;

LATTICE DISTORTIONS; MOLECULAR BEAM TECHNIQUES; MOLECULAR HYDROGEN; STRUCTURE SENSITIVE REACTION CHANNELS;

SEMICONDUCTING SILICON;

EID: 0037717409     PISSN: 00319007     EISSN: None     Source Type: Journal    
DOI: 10.1103/PhysRevLett.86.123     Document Type: Article

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