High-temperature AlN interlayer for crack-free AlGaN growth on GaN

Journal of Applied Physics

Volumn 104, Issue 4, 2008, Pages

  Sun, Qian ^a   Wang, Jianfeng ^a   Wang, Hui ^a   Jin, Ruiqin ^a   Jiang, Desheng ^a   Zhu, Jianjun ^a   Zhao, Degang ^a   Yang, Hui ^a   Zhou, Shengqiang ^b   Wu, Mingfang ^b   Smeets, Dries ^b   Vantomme, Andre ^b  

^a INSTITUTE OF SEMICONDUCTORS   (China)

^b KU LEUVEN   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

GALLIUM ALLOYS; GALLIUM NITRIDE; SEMICONDUCTING GALLIUM; STRAIN CONTROL; STRAIN RELAXATION;

AL COMPOSITIONS; DIRECT GROWTH; GA CONTENT; HIGH TEMPERATURES;

ELECTRIC LOAD MANAGEMENT;

EID: 50849113075     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2968546     Document Type: Article

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