Influence of the AlN interlayer crystal quality on the strain evolution of GaN layer grown on Si (111)

Applied Physics Letters

Volumn 90, Issue 1, 2007, Pages

  Liu, W ^a   Zhu, J J ^a   Jiang, D S ^a   Yang, H ^a   Wang, J F ^b  

^a INSTITUTE OF SEMICONDUCTORS   (China)

^b WUHAN UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL GROWTH; CRYSTALLINE MATERIALS; DISLOCATIONS (CRYSTALS); INTERFACES (MATERIALS); STRAIN;

CRYSTAL QUALITY; INTERLAYER SURFACES;

SEMICONDUCTING FILMS;

EID: 33846110441     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2430396     Document Type: Article

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