Composition measurement in strained AlGaN epitaxial layers using x-ray diffraction

Applied Physics Letters

Volumn 85, Issue 26, 2004, Pages 6359-6361

  Wallis, D J ^a   Keir, A M ^a   Balmer, R S ^a   Soley, D E J ^a   Martin, T ^a  

^a QINETIQ   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

COMPOSITION; EPITAXIAL GROWTH; POISSON RATIO; SEMICONDUCTOR MATERIALS; STRAIN; SUBSTRATES; THERMAL EXPANSION; X RAY DIFFRACTION;

ASYMMETRIC REFLECTIONS; ATOMIC SPACING; BIAXIAL STRAIN; EPITAXIAL LAYERS;

SEMICONDUCTING ALUMINUM COMPOUNDS;

EID: 13444306440     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1835999     Document Type: Article

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