Growth of crack-free GaN films on Si(111) substrate by using Al-rich AIN buffer layer

Journal of Applied Physics

Volumn 96, Issue 9, 2004, Pages 4982-4988

  Lu, Yuan ^a   Cong, Guangwei ^a   Liu, Xianglin ^a   Lu, Da Cheng ^a   Zhu, Qinsheng ^a   Wang, Xiaohui ^a   Wu, Jiejun ^a   Wang, Zhanguo ^a  

^a INSTITUTE OF SEMICONDUCTORS   (China)

Author keywords

[No Author keywords available]

Indexed keywords

COMPRESSIVE STRESS; CRACK INITIATION; DIFFUSION; METALLORGANIC CHEMICAL VAPOR DEPOSITION; SECONDARY ION MASS SPECTROMETRY; STOICHIOMETRY; TENSILE STRESS; THIN FILMS; X RAY DIFFRACTION ANALYSIS; X RAY PHOTOELECTRON SPECTROSCOPY;

COUNTERBALANCE; CRYSTAL QUALITY; DIFFUSION EFFECTS; EPILAYERS;

SILICON COMPOUNDS;

EID: 9744250155     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1787588     Document Type: Article

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