Advances in Multi-Gate MOSFET circuit design

Proceedings of the IEEE International Conference on Electronics, Circuits, and Systems

Volumn , Issue , 2007, Pages 186-189

  Fulde, M ^a,b   Arnim, K V ^c   Pacha, C ^c   Bauer, F ^c   Russ, C ^c   Siprak, D ^c   Xiong, W ^d   Marshall, A ^d   Cleavelin, C R ^d   Schruefer, K ^c   Schmitt Landsiede, D ^b   Knoblinger, G ^a  

^a INFINEON TECHNOLOGIES AUSTRIA AG   (Austria)

^b TECHNICAL UNIVERSITY OF MUNICH   (Germany)

^c INFINEON TECHNOLOGIES AG   (Germany)

^d TEXAS INSTRUMENTS   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

MOSFET DEVICES; STATIC RANDOM ACCESS STORAGE;

CIRCUIT DESIGNS; INTERNATIONAL CONFERENCES; SRAM CELL STABILITY;

INTEGRATED CIRCUIT MANUFACTURE;

EID: 50649121614     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ICECS.2007.4510961     Document Type: Conference Paper

References (17)

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