Layout options for stability tuning of SRAM cells in Multi-Gate-FET technologies

ESSCIRC 2007 - Proceedings of the 33rd European Solid-State Circuits Conference

Volumn , Issue , 2007, Pages 392-395

  Bauer, F ^a,b   Von Arnim, K ^a   Pacha, C ^a   Schulz, T ^a   Fulde, M ^b   Nackaerts, A ^d   Jurczak, M ^d   Xiong, W ^c   San, K T ^c,d   Cleavelin, C R ^c   Schrufer K ^a   Georgakos, G ^a   Schmitt Landsiedel, D ^b  

^a INFINEON TECHNOLOGIES AG   (Germany)

^b TECHNICAL UNIVERSITY OF MUNICH   (Germany)

^c TEXAS INSTRUMENTS   (United States)

^d IMEC   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

CORE CELLS; EUROPEAN; GATE OXIDES (GOX); GATE STACKS; MEASUREMENT RESULTS; METAL GATES; SOLID-STATE CIRCUITS CONFERENCE; SRAM CELLS; STATIC NOISE;

ARCHITECTURAL DESIGN; FIELD EFFECT TRANSISTORS; MESFET DEVICES; MICROFLUIDICS; STATIC RANDOM ACCESS STORAGE; TECHNOLOGY;

CMOS INTEGRATED CIRCUITS;

EID: 44849084964     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ESSCIRC.2007.4430325     Document Type: Conference Paper

References (7)

1. K. von Arnim, et al., "A Low-Power Multi-Gate FET CMOS Technology with 13.9ps Inverter Delay, Large-Scale Integrated High Performance Digital Circuits and SRAM," 2007, to be published on VLSI 07.
2. S. Takagi, et al, "On the Universality of Inversion Layer Mobility in Si MOSFET's: Part II-Effects of Surface Orientation," Electron Devices, IEEE Transactions on, vol. 41, no. 12, pp. 2363-2368, 1994.
3. M. Yang, et al., "Performance Dependence of CMOS on Silicon Substrate Orientation for Ultrathin Oxynitride and Hf02 Gate Dielectrics," Electron Device Letters, IEEE, vol. 24, no. 5, pp. 339-341, 2003.
4. W. Xiong, et al, "Intrinsic Advantages of SOI Multiple-Gate MOSFET (MuGEET) for Low Power Applications," May 2007, invited paper on ECS '07.
5. L. Chang, et al., "CMOS Circuit Performance Enhancement by Surface Orientation Optimization," Electron Devices, IEEE Transactions on, vol. 51, no. 10, pp. 1621-1627, 2004.
6. Z. Guo, et al, "FinFET-based SRAM design," in Low Power Electronics and Design, 2005. ISLPED '05. Proceedings of the 2005 International Symposium on, 2005, pp. 2-7.
7. S.-H. Oh, et al, "Analytic Description of Short-Channel Effects in Fully-Depleted Double-Gate and Cylindrical, Surrounding-Gate Mosfets," Electron Device Letters, IEEE, vol. 21, no. 9, pp. 445-447, 2000.