A physically-based analytic model for stress-induced hole mobility enhancement

2004 10th International Workshop on Computational Electronics, IEEE IWCE-10 2004, Abstracts

Volumn , Issue , 2004, Pages 26-27

  Obradovic, B ^a   Matagne, P ^a   Shifren, L ^a   Wang, X ^a   Stettier, M ^a   He, J ^a   Giles, M D ^a  

^a INTEL CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; COMPRESSIVE STRESS; COMPUTATIONAL METHODS; COMPUTER SIMULATION; CONTINUUM MECHANICS; ELECTRIC FIELDS; MONTE CARLO METHODS; STRESS ANALYSIS; TENSORS; TRANSPORT PROPERTIES;

BAND STRUCTURE MODULATION; BOLTZMANN STATISTICS; CARRIER ENERGY; CONTINUUM TRANSPORT SIMULATORS; ENERGY SEPARATION; MOBILITY TENSORS;

HOLE MOBILITY;

EID: 21844457694     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/iwce.2004.1407301     Document Type: Conference Paper

References (1)

1. M.D. Giles at al., "Understanding Stress Enhanced Performance in Intel 90 nm CMOS Technology", VLSI Symposium 2004 (to be published)