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Physica Status Solidi (A) Applied Research

Volumn 169, Issue 2, 1998, Pages 193-198

Thermal warpage of Czochralski silicon wafers grown under a nitrogen ambience

(5) Lu, Huanming a Yang, Deren a Li, Liben a Ye, Zhizhen a Que, Duanlin a

a ZHEJIANG UNIVERSITY (China)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CRYSTAL GROWTH FROM MELT; NITROGEN; PRECIPITATION (CHEMICAL); SEMICONDUCTOR DOPING; STRENGTH OF MATERIALS;

PREANNEALING; THERMAL WARPAGE;

SILICON WAFERS;

EID: 0032179379 PISSN: 00318965 EISSN: None Source Type: Journal
DOI: 10.1002/(SICI)1521-396X(199810)169:2<193::AID-PSSA193>3.0.CO;2-J Document Type: Article

Times cited : (15)

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