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Volumn 82-84, Issue , 2002, Pages 69-74
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Role of nitrogen-related complexes in the formation of defects in N-Cz silicon wafers
a
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Author keywords
Clusters; Complex; Denuded zones; Etching; FTIR; Interstitials; Lo Hi; Nitrogen; Nomarski; Nucleation; OPP; Ox ygen; Oxide; Oxynitride; Precipitate; Silicon; SIMS; Size distribution; TEM; Vacancy; Void
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Indexed keywords
AMORPHOUS MATERIALS;
ANNEALING;
CRYSTAL DEFECTS;
CRYSTAL GROWTH FROM MELT;
DOPING (ADDITIVES);
ETCHING;
NITROGEN;
OPTICAL MICROSCOPY;
SPUTTERING;
SUPERSATURATION;
SURFACE STRUCTURE;
TRANSMISSION ELECTRON MICROSCOPY;
COMPLEX INTERACTIONS;
DEFECT FORMATION;
NITROGEN RELATED COMPLEXES;
NOMARSKI OPTICAL MICROSCOPY;
OXYGEN PRECIPITATE PROFILER;
OXYGEN PRECIPITATION;
WRIGHT ETCHING;
SILICON WAFERS;
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EID: 18844471981
PISSN: 10120394
EISSN: None
Source Type: Book Series
DOI: None Document Type: Conference Paper |
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Times cited : (15)
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References (23)
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