Determination of the criteria for nucleation of ring-OSF from small as-grown oxygen precipitates in CZ-Si crystals

Materials Science and Engineering B

Volumn 36, Issue 1-3, 1996, Pages 16-21

  Marsden, Kieran ^a   Kanda, Tadashi ^a   Okui, Masahiko ^b   Hourai, Masataka ^a   Shigematsu, Tatsuhiko ^a  

^a SUMCO CORPORATION   (Japan)

^b Sumitomo Metal Industries Ltd   (Japan)

Author keywords

Annealing; Defect formation; Oxygen; Silicon

Indexed keywords

EID: 0043039404     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/0921-5107(95)01252-4     Document Type: Article

References (21)

1. F. Shimura, Semiconductor Silicon Crystal Technology, Academic Press, San Diego, 1989, p. 279.
2. V.V. Voronkov, J. Crystal Growth, 59 (1982) 625.
3. M. Hasebe, Y. Takeoka, S. Shinoyama and S. Naito, in K. Sumino (ed.), Proc. Int. Conf. Defect Control in Semiconductors, Yokohama, Japan, 1989, North-Holland, Amsterdam, 1990, p. 157.
4. K. Marsden, S. Sadamitsu, M. Hourai, S. Sumita and T. Shigematsu, in H.R. Huff, W. Bergholz and K. Sumino (eds.), Semiconductor Silicon 1994, Electrochemical Society, Pennington, 1994, Proc. Vol. 94-10, p. 684.
5. S. Sadamitsu, M. Okui, K. Sueoka, K. Marsden and T. Shigematsu, Jpn. J. Appl. Phys., 34 (1995) L597.
6. M. Hourai, M. Sano, S. Sumita and T. Shigematsu, in Progress in Semiconductor Fabrication, SEMICON Technical Conf., Geneva, 1993.
7. S. Sadamitsu, S. Umeno, Y. Koike, M. Hourai, S. Sumita and T. Shigematsu, Jpn. J. Appl. Phys., 32 (1993) 3675.
8. H. Yamagishi, I. Fusegawa, N. Fujimaki and M. Katayama, in Proc. Symp. Advanced Science and Technology of Silicon Materials, Kona, Hawaii, 1991, Japan Society for the Promotion of Science 145th Committee, Tokyo, 1991, p. 83.
9. J. Ryuta, E. Morita, T. Tanaka and Y. Shimanuki, Jpn. J. Appl. Phys., 29 (1990) L1947.
10. M. Sano, M. Hourai, S. Sumita and T. Shigematsu, in B.O. Kolbesen, P. Stallhofer, C. Claeys and F. Tardif (eds.), Crystalline Defects and Contamination; Their Impact and Control in Device Manufacturing, Proc. Satellite Symp. ESSDERC 93, Grenoble, France, 1993, Electrochemical Society, Pennington, p. 3.
11. K. Marsden, S. Sadamitsu, M. Hourai, S. Sumita and T. Shigematsu, J. Electrochem. Soc., 142 (1995) 996.
12. K. Marsden, S. Sadamitsu, T. Yamamoto and T. Shigematsu, Jpn. J. Appl. Phys., in press.
13. N. Ikeda, A. Buczkowski and F. Shimura, Appl. Phys. Lett., 63 (1993) 2914.
14. J.M. Hwang and D.K. Schroder, J. Appl. Phys., 59 (1986) 2476.
15. N. Inoue, Silicon Technology II, Kaibundo, Tokyo, 1990, Chapter 4 (in Japanese).
16. M. Stavola, J.R. Patel, L.C. Kimmerling and P.E. Freeland, Appl. Phys. Lett., 42 (1983) 73.
17. J.G. Wilkes, in Properties of Silicon, INSPEC, London, 1988, p. 281.
18. H. Takaoka, J. Osaka and N. Inoue, Jpn. J. Appl. Phys., 18 (1979) 179.
19. T. Kanda, K. Marsden, M. Hourai, S. Miki, T. Shigematsu and H. Tomokage, in Ext. Abstracts 42nd Spring Meet., Japan Society of Applied Physics and Related Societies, Tokyo, 1995, 28a-ZW-02 (in Japanese).
20. K. Wada, H. Nakanishi, H. Takaoka and N. Inoue, J. Crystal Growth, 57 (1982) 535.
21. K. Sueoka, M. Akatsuka, K. Nishihara, T. Yamamoto and S. Kobayashi, in K. Sumino (ed.), Proc. 18th Int. Conf. on Defects in Semiconductors, North-Holland, Amsterdam, in press.