Size distribution of oxide precipitates in annealed Czochralski silicon

Electrochemical and Solid-State Letters

Volumn 2, Issue 11, 1999, Pages 589-591

  Sasaki, Tsutomu ^a,b   Ono, Toshiaki ^a   Rozgonyi, George A ^a  

^a North Carolina State University   (United States)

^b NONE   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CRYSTAL GROWTH FROM MELT; DISSOLUTION; INTERFACES (MATERIALS); PARTICLE SIZE ANALYSIS; POINT DEFECTS; PRECIPITATION (CHEMICAL);

HIGH TEMPERATURE DISSOLUTION ANNEALING; PRECIPITATE/MATRIX INTERFACES;

SILICON WAFERS;

EID: 0033341879     PISSN: 10990062     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1390915     Document Type: Article

References (19)

1. Oxygen in Silicon, F. Shimura, Editor, Academic Press, New York (1994).
2. A. Borghesi, B. Pivac, A. Sassella, and A. A. Stella, J. Appl. Phys., 77, R4169 (1995).
3. W. J. Taylor, U. Gosele, and T. Y. Tan, J. Appl. Phys., 72, 2192 (1992).
4. J. Osaka, N. Inoue, and K. Wada, Appl. Phys. Lett., 36, 288 (1980).
5. N. Inoue, K. Wada, and J. Osaka, in Semiconductor Silicon 1981, H. R. Huff, R. J. Kriegler, and Y. T. Yoshiyuki, Editors, PV 81-5, p. 778, The Electrochemical Society Proceedings Series, Pennington, NJ (1981).
6. F. S. Ham, J. Phys. Chem. Solids, 6, 335 (1958).
7. K. Wada and N. Inoue, J. Cryst. Growth, 449, 749 (1980).
8. M. Schrems, T. Brabec, M. Budil, H. Potzl, E. Guerrero, D. Huber, and P. Pongratz, Mater. Sci. Eng., B4, 393 (1989).
9. J. Esfandyari, C. Schmeiser, S. Senkader, G. Hobler, and B. Murphy, J. Electrochem. Soc., 143, 995 (1996).
10. K. Naki, M. Hasebe, T. Iwasaki, and Y. Tsumori, Mater. Res. Soc. Symp. Proc., 442, 113 (1997).
11. K. Nakai, A. Matsumura, and H. Harada, Rev. Sci. Inst., 69, 3283 (1998).
12. F. Shimura, H. Tsuya, and T. Kawamura, Appl. Phys. Lett., 37, 483 (1980).
13. J. S. Batchelder and M. A. Taubenblatt, Appl. Phys. Lett., 55, 215 (1989).
14. D. Guidotti, M. A. Taubenblatt, S. J. Batchelder, R. L. Kleinhenz, and A. A. Dupnock, Appl. Phys. A, A55, 139 (1992).
15. T. Y. Tan and C. Y. Kung, in Semiconductor Silicon 1986, H. R. Huff, T. Abe, and B. Kolbesen, Editors. PV 86-4, p. 864, The Electrochemical Society Proceedings Series, Pennington, NJ (1986).
16. S. M. Hu, Appl. Phys. Lett., 36, 561 (1980).
17. H. Harada, T. Abe, and J. Chikawa, in Semiconductor Silicon 1986, H. R. Huff, T. Abe, and B. Kolbesen, Editors, PV 86-4, p. 76, The Electrochemical Society Proceedings Series, Pennington, NJ (1986).
18. J. Vanhellemont and C. Claeys, J. Appl. Phys., 62, 3960 (1987).
19. W. J. Taylor, T. Y. Tan, and U. M. Gosele, Appl. Phys. Lett., 59, 2007 (1991).