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Volumn 143, Issue 3, 1996, Pages 995-1000
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Computer simulation of oxygen precipitation in Czochralski-Grown silicon during HI-LO-HI anneals
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Author keywords
[No Author keywords available]
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Indexed keywords
ANNEALING;
COMPUTER SIMULATION;
CRYSTAL GROWTH FROM MELT;
DIFFUSION;
DISSOLUTION;
MATHEMATICAL MODELS;
NONLINEAR EQUATIONS;
PARTIAL DIFFERENTIAL EQUATIONS;
POINT DEFECTS;
PRECIPITATION (CHEMICAL);
STACKING FAULTS;
STATISTICAL METHODS;
CONTINUITY EQUATIONS;
FOKKER PLANK EQUATIONS;
HI-LO-HI ANNEALS;
INTERSTITIAL OXYGEN DIFFUSION;
OXYGEN PRECIPITATES;
PRECIPITATE STRESS;
RATE EQUATIONS;
OXYGEN;
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EID: 0030107571
PISSN: 00134651
EISSN: None
Source Type: Journal
DOI: 10.1149/1.1836571 Document Type: Article |
Times cited : (34)
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References (21)
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