Oxygen precipitation in silicon: Experimental studies and theoretical investigations within the classical theory of nucleation

Journal of Applied Physics

Volumn 85, Issue 12, 1999, Pages 8097-8111

  Kelton, K F ^a   Falster, R ^b   Gambaro, D ^b   Olmo, M ^b   Cornara, M ^b   Wei, P F ^a  

^a WASHINGTON UNIVERSITY   (United States)

^b MEMC Electronic Materials SpA   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001166331     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.370648     Document Type: Article

References (32)

1. A. Borghesi, B. Pival, A. Sassella, and A. Stella, J. Appl. Phys. 77, 4169 (1995).
2. Y. Shimanuki, H. Furuya, I. Suzuki, and K. Maurai, Jpn. J. Appl. Phys. 24, 1594 (1985).
3. G. Fraundorf, P. Fraundorf, R. A. Craven, R. A. Frederick, J. Moody, and R. W. Shaw, J. Electrochem. Soc. 132, 1701 (1985).
4. N. Inoue, K. Watanabe, K. Wada, and J. Osaka, J. Cryst. Growth 84, 21 (1987).
5. T. Y. Tan and C. Y. Kung, J. Appl. Phys. 59, 917 (1986).
6. J. P. Lavine, J. T. Russel, and G. A. Hawkins, in Atomic Scale Calculations in Materials Science, edited by J. Tersoff, D. Vanderbilt, and V. Vitek, Mater. Res. Soc. Symp. Proc. (Materials Research Society, Pittsburgh, 1989), Vol. 141, p. 261.
7. J. P. Lavine and G. A. Hawkins, in Structure and Properties of Interfaces in Materials, edited by W. A. T. Clark, C. L. Briant, and U. Dahmen, Mater. Res. Soc. Symp. Proc. (Materials Research Society, Pittsburgh, 1992), Vol. 238, p. 285.
8. K. F. Kelton in Solid State Physics, edited by H. Ehrenreich and D. Turnbull (Academic, New York, 1991), Vol. 45, p. 75.
9. M. Schrems, P. Pongratz, M. Budil, H. Ptzl, J. Hage, E. Guerrero, and D. Huber, in Semiconductor Silicon, edited by H. R. Huff, K. G. Barraclough, and J. Chikawa (The Electrochemical Society, Pennington, NJ, 1990), p. 141.
10. M. Schrems, in Oxygen in Silicon, edited by F. Shimura, Vol. 42 of Semiconductors and Semimetals (Academic, New York, 1994), p. 391.
11. R. Falster, M. Cornara, D. Gambaro, M. Olmo, and M. Pagani, Solid State Phenom. 57,58, 123 (1997).
12. A. Bazzali, G. Borionetti, R. Falster, D. Gambaro, L. MuleStagno, M. Olmo, R. Orizio, and M. Porrini, in the 1998 International Conference on Characterization and Metrology for ULSI Technology, Gaithersburg, MD, 23-27, March, 1998.
13. G. Schimmel, J. Electrochem. Soc. 123, 5 (1976).
14. F. S. Ham, J. Phys. Chem. Solids 6, 335 (1958).
15. P. Harrowell and D. W. Oxtoby, J. Chem. Phys. 80, 1639 (1984).
16. K. F. Kelton and A. L. Greer, Phys. Rev. B 38, 10089 (1988).
17. K. F. Kelton and R. J. Falster, in Defects and Diffusion in Silicon Processing, edited by T. D. de la Rubia, S. Coffa, P. A. Stolk, and C. S. Rafferty, Mater. Res. Soc. Symp. Proc. (Materials Research Society, Pittsburgh, 1997), Vol. 469, p. 107.
18. D. Wu, in Solid State Physics, edited by H. Ehrenreich and F. Spaepen (Academic, New York, 1996), Vol. 50, p 38.
19. K. F. Kelton, A. L. Greer, and C. V. Thompson, J. Chem. Phys. 79, 6261 (1983).
20. F. Kelton and M. C. Weinberg, J. Non-Cryst. Solids 180, 17 (1994).
21. R. C. Newman and R. Jones, in Oxygen in Silicon, edited by F. Shimura (Academic, New York, 1994), p. 289.
22. T. Y. Tan and W. J. Taylor, in Ref. 10, p. 391.
23. W. A. Tiller, S. Hahn, and F. A. Ponce, J. Appl. Phys. 59, 3255 (1986).
24. W. J. Taylor, T. Y. Tan, and U. M. Gosele, Appl. Phys. Lett. 59, 2007 (1991).
25. J. C. Mikkelsen, Jr., in Oxygen, Carbon, Hydrogen and Nitrogen in Silicon, edited by J. C. Mikkelsen, Jr., S. J. Pearton, J. W. Corbett, and S. J. Pennycook (Materials Research Society, Pittsburgh, 1986), p. 19.
26. R. A. Craven, in Semiconductor Silicon, edited by H. R. Huff and R. J. Kriegler (The Electrochemical Society, New York, 1981), p. 254.
27. K. F. Kelton, Mater. Sci. Eng., B 32, 145 (1995).
28. D. Kashchiev, Surf. Sci. 14, 209 (1969).
29. V. A. Shneidman and M. C. Weinberg, J. Chem. Phys. 97, 3621 (1992).
30. P. F. James, Phys. Chem. Glasses 15, 95 (1974).
31. K. Lakshmi Narayan and K. F. Kelton, J. Non-Cryst. Solids 220, 222 (1997).
32. S. A. McQuaid, M. J. Binns, C. A. Londos, J. H. Tucker, A. R. Brown, and R. C. Newman, J. Appl. Phys. 77, 1427 (1995).