Modeling of extrinsic extended defect evolution in ion-implanted silicon upon thermal annealing

Materials Science and Engineering: B

Volumn 114-115, Issue SPEC. ISS., 2004, Pages 184-192

  Ortiz, C J ^a   Cristiano, F ^b   Colombeau, B ^c   Claverie, A ^d   Cowern, N E B ^c  

^a FRAUNHOFER INSTITUTE FOR INTEGRATED SYSTEMS AND DEVICE TECHNOLOGY IISB   (Germany)

^b LAAS CNRS   (France)

^c UNIVERSITY OF SURREY   (United Kingdom)

^d CEMES CNRS   (France)

Author keywords

Ion implantation; Self interstitials; 1 1 3 Defects

Indexed keywords

ANNEALING; GENETIC ALGORITHMS; PARAMETER ESTIMATION; SET THEORY; SILICON; TRANSMISSION ELECTRON MICROSCOPY;

CALIBRATED MODEL; MEAN-SIZE DISTRIBUTION; SELF-INTERSTITALS; {1 1 3} DEFECTS;

ION IMPLANTATION;

EID: 10644230940     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mseb.2004.07.054     Document Type: Conference Paper

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