Atomistic analysis of defect evolution and transient enhanced diffusion in silicon

Journal of Applied Physics

Volumn 94, Issue 2, 2003, Pages 1013-1018

  Aboy, Maria ^a   Pelaz, Lourdes ^a   Marqués, Luis A ^a   Enriquez, L ^a   Barbolla, Juan ^a  

^a UNIVERSITY OF VALLADOLID   (Spain)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; COMPUTER SIMULATION; CRYSTAL DEFECTS; DIFFUSION; DISSOLUTION; MONTE CARLO METHODS; SEMICONDUCTOR DOPING; SUPERSATURATION; TRANSMISSION ELECTRON MICROSCOPY;

TRANSIENT ENHANCED DIFFUSION (TED);

SILICON;

EID: 0043269764     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1586990     Document Type: Article

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