Modeling dislocation loop nucleation and evolution in germanium, arsenic and boron implanted silicon

Materials Research Society Symposium - Proceedings

Volumn 717, Issue , 2002, Pages 249-254

  Avci, Ibrahim ^a   Law, Mark E ^a  

^a J Crayton Pruitt Family Department of Biomedical Engineering   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; DISLOCATIONS (CRYSTALS); ION IMPLANTATION; NUCLEATION;

NUCLEATED LOOPS;

SEMICONDUCTING SILICON;

EID: 0036451511     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-717-c5.9     Document Type: Conference Paper

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