Evaluation of high and low activation resists for EUV lithography

Journal of Photopolymer Science and Technology

Volumn 19, Issue 4, 2006, Pages 525-531

  Thackeray, James W ^a   Nassar, Roger A ^a   Spear Alfonso, Kathleen ^a   Wallow, Tom ^b   LaFontaine, Bruno ^b  

^a ROHM AND HAAS COMPANY   (United States)

^b ADVANCED MICRO DEVICES   (United States)

Author keywords

Chemically Amplified Resists; EUV lithography; Line Edge Roughness; Outgassing; Resolution

Indexed keywords

EID: 33748469333     PISSN: 09149244     EISSN: 13496336     Source Type: Journal    
DOI: 10.2494/photopolymer.19.525     Document Type: Article

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