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Volumn 6153 I, Issue , 2006, Pages

Effects of material design on extreme ultraviolet (EUV) resist outgassing

Author keywords

EUV; Outgassing; Resist

Indexed keywords

EXTREME ULTRAVIOLET (EUV) LITHOGRAPHY; PHOTOACID GENERATOR (PAG); RESIST;

EID: 33745605231     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.657163     Document Type: Conference Paper
Times cited : (39)

References (10)
  • 1
    • 24644439997 scopus 로고    scopus 로고
    • Quantification of EUV resist outgassing
    • W. Yueh, H.B. Cao, V. Thirmala, H. Choi, "Quantification of EUV Resist Outgassing," Proc. SPIE, Vol. 5753, 765, 2005.
    • (2005) Proc. SPIE , vol.5753 , pp. 765
    • Yueh, W.1    Cao, H.B.2    Thirmala, V.3    Choi, H.4
  • 2
    • 0034317873 scopus 로고    scopus 로고
    • Outgassing of photoresist materials at extreme ultraviolet wavelength
    • P.M. Dentinger, "Outgassing of photoresist materials at extreme ultraviolet wavelength," J. of Vac. Sci. Technol. B, 18(6), 3364, 2000.
    • (2000) J. of Vac. Sci. Technol. B , vol.18 , Issue.6 , pp. 3364
    • Dentinger, P.M.1
  • 3
    • 0034316491 scopus 로고    scopus 로고
    • Outgassing of photoresists in extreme ultraviolet lithography
    • Nov/Dec
    • M.M. Chauhan, P.J. Nealey, "Outgassing of photoresists in extreme ultraviolet lithography," J. Vac. Sci. Technol. B 18(6), 3402. Nov/Dec 2000.
    • (2000) J. Vac. Sci. Technol. B , vol.18 , Issue.6 , pp. 3402
    • Chauhan, M.M.1    Nealey, P.J.2
  • 4
    • 0035326267 scopus 로고    scopus 로고
    • Photoinduced outgassing form the resist for extreme ultraviolet lithography by the analysis of mass spectroscopy
    • May/June
    • T. Watanabe, H. Kinoshita, H. Nii, K. Hamamoto, H. Tsubakino, H. Hada, H. Komano, S. Irie, "Photoinduced outgassing form the resist for extreme ultraviolet lithography by the analysis of mass spectroscopy," J. Vac. Sci. Technol. B 19(3), 736, May/June 2001.
    • (2001) J. Vac. Sci. Technol. B , vol.19 , Issue.3 , pp. 736
    • Watanabe, T.1    Kinoshita, H.2    Nii, H.3    Hamamoto, K.4    Tsubakino, H.5    Hada, H.6    Komano, H.7    Irie, S.8
  • 5
    • 24644517494 scopus 로고    scopus 로고
    • Comparison of resist outgassing at wavelengths from 193nm to 13nm
    • W.D. Domke, M. Kern, K. Lowack, O. Kirch, M. Bertolo, "Comparison of Resist Outgassing at Wavelengths from 193nm to 13nm", Proc. SPIE 5753, 1066-1075, 2005
    • (2005) Proc. SPIE , vol.5753 , pp. 1066-1075
    • Domke, W.D.1    Kern, M.2    Lowack, K.3    Kirch, O.4    Bertolo, M.5
  • 8
    • 27744473875 scopus 로고    scopus 로고
    • Design and performance of EUV resist containing photoacid generator for sub-100nm lithography
    • M. Thiyagarajan, K. Gonsalves, K. Dean and E. C. H. Sykes, "Design and Performance of EUV Resist Containing Photoacid Generator for Sub-100nm Lithography"; J. Nanoscience and Nanotech. 5, 1181, 2005.
    • (2005) J. Nanoscience and Nanotech. , vol.5 , pp. 1181
    • Thiyagarajan, M.1    Gonsalves, K.2    Dean, K.3    Sykes, E.C.H.4
  • 9
    • 33745629472 scopus 로고    scopus 로고
    • Improved lithographic performance for EUV resists based on polymers having a photoacid generator (PAG) in the backbone
    • "M. Thiyagarajan, K. Dean and K. Gonsalves, "Improved Lithographic Performance for EUV Resists based on Polymers having a Photoacid Generator (PAG) in the Backbone," J. Photopolymer Sci. & Technol., vol. 18, #6, 737, 2005.
    • (2005) J. Photopolymer Sci. & Technol. , vol.18 , Issue.6 , pp. 737
    • Thiyagarajan, M.1    Dean, K.2    Gonsalves, K.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.