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Volumn 88, Issue 17, 2006, Pages

Si (111) substrates as highly effective pseudomasks for selective growth of GaN material and devices by ammonia-molecular-beam epitaxy

(3) Tang, H a Haffouz, S a Bardwell, J A a

a NATIONAL RESEARCH COUNCIL CANADA (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

AMMONIA; MOLECULAR BEAM EPITAXY; NUCLEATION; OPTIMIZATION; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTOR GROWTH; SEMICONDUCTOR QUANTUM DOTS; SUBSTRATES;

AMMONIA-MOLECULAR-BEAM EPITAXY; CRITICAL NUCLEATION TEMPERATURE; GAN DEVICES; GAN PATTERNS;

SILICON COMPOUNDS;

EID: 33646407603 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.2199457 Document Type: Article

Times cited : (25)

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