Electrically active defects in BF+2 implanted and germanium preamorphized silicon

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 134, Issue 2, 1998, Pages 195-201

  Boussaid, Farid ^a   Benzohra, Mohammed ^a   Olivie, François ^a   Alquier, Daniel ^a   Martinez, Augustin ^a  

^a LAAS CNRS   (France)

Author keywords

BF+2 implantation; Deep level transient spectroscopy; Deep levels; Germanium preamorphization; Isothermal transient capacitance; Ultra shallow p+ n junction

Indexed keywords

AMORPHIZATION; ANNEALING; BORON COMPOUNDS; CAPACITANCE; CRYSTAL DEFECTS; CRYSTALLINE MATERIALS; DEEP LEVEL TRANSIENT SPECTROSCOPY; ENERGY GAP; GERMANIUM; ION IMPLANTATION; SEMICONDUCTOR DOPING; SEMICONDUCTOR JUNCTIONS;

ELECTRICAL ACTIVATION; ISOTHERMAL TRANSIENT CAPACITANCE;

SILICON WAFERS;

EID: 0032002916     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-583X(98)00571-0     Document Type: Article

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