Optimization of pre-amorphization and dopant implant conditions for advanced annealing

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 237, Issue 1-2, 2005, Pages 35-40

  Felch, S B ^a   Graoui, H ^a   Tsai, G ^a   Mayur, A ^a  

^a APPLIED MATERIALS INC   (United States)

Author keywords

Advanced annealing; Ion implantation; Ultra shallow junctions

Indexed keywords

AMORPHIZATION; ANNEALING; CMOS INTEGRATED CIRCUITS; GERMANIUM; ION IMPLANTATION; SEMICONDUCTOR DOPING;

ADVANCED ANNEALING; IMPLANTED JUNCTIONS; SHEET RESISTANCE; ULTRA-SHALLOW JUNCTIONS;

SEMICONDUCTOR JUNCTIONS;

EID: 23444433480     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.nimb.2005.04.075     Document Type: Conference Paper

References (7)

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3. S.P. McCoy, J. Gelpey, K. Elliott, K.A. Gable, A. Jain, and L. Robertson Proc. of Seventh Int. Workshop on Fabrication, Characterization, and Modeling of Ultra-Shallow Doping Profiles in Semiconductors 2003 American Vacuum Society 104
4. S. Talwar, D. Markle, and M. Thompson Solid State Technol. July 2003 83
5. A. Al-Bayati, S. Tandon, A. Mayur, M. Foad, D. Wagner, R. Murto, D. Sing, C. Ferguson, L. Larson, in: 2000 Int. Conf. on Ion Implantation Technology Proc., 2000, p. 54.
6. D.F. Downey, US Patent Application Publication 2002/0187614, 12 December 2002.
7. S. Felch, J. Borland, Z. Fang, B.-W. Koo, H. Gossmann, K. Jones, C. Lindfors, in: 2002 Int. Conf. on Ion Implantation Technology Proc., 2002, p. 52.