Electron transport at technologically significant stepped 4H-SiC/SiO 2 interfaces

International Conference on Simulation of Semiconductor Processes and Devices, SISPAD

Volumn , Issue , 2006, Pages 236-239

  Pennington, G ^a   Potbhare, S ^a   McGarrity, J M ^a   Goldsman, N ^a   Lelis, A ^b   Ashman, C ^c  

^a UNIVERSITY OF MARYLAND   (United States)

^b U S ARMY RESEARCH LABORATORY   (United States)

^c HPTi   (United States)

Author keywords

Electron transport; Interface steps; Monte Carlo simulation; Phonon scattering; Roughness scattering; SiC

Indexed keywords

ELECTRON MOBILITY; INTERFACES (MATERIALS); MOSFET DEVICES; PHONON SCATTERING;

INTERFACE STEPS; ROUGHNESS SCATTERING;

ELECTRON TRANSPORT PROPERTIES;

EID: 42549131456     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/SISPAD.2006.282879     Document Type: Conference Paper

References (7)

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