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Volumn 59, Issue 1-4, 2001, Pages 115-118
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Si-SiO2 interface trap capture properties
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Author keywords
Charge pumping; Si SiO2 interface traps; Thermally activated capture; Tunnelling
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Indexed keywords
ELECTRIC CHARGE;
ELECTRON TRAPS;
ELECTRON TUNNELING;
SILICON;
CHARGE PUMPING;
INTERFACE TRAPS;
INTERFACES (MATERIALS);
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EID: 0035498505
PISSN: 01679317
EISSN: None
Source Type: Journal
DOI: 10.1016/S0167-9317(01)00681-5 Document Type: Conference Paper |
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Times cited : (7)
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References (14)
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