A unified analytic drain-current model for multiple-gate MOSFETs

IEEE Transactions on Electron Devices

Volumn 55, Issue 8, 2008, Pages 2157-2163

  Yu, Bo ^a   Song, Jooyoung ^a   Yuan, Yu ^a   Lu, Wei Yuan ^a,b   Taur, Yuan ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

^b TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY   (Taiwan)

Author keywords

Compact model; MOSFETs; Multiple gate (MG)

Indexed keywords

COMPUTER SIMULATION; DENSITY (SPECIFIC GRAVITY); DRAIN CURRENT; GALERKIN METHODS; LEAKAGE CURRENTS; MAGNESIUM PRINTING PLATES; NONMETALS; SEMICONDUCTING ALUMINUM COMPOUNDS; SILICON; SILICON CARBIDE;

COMPACT MODEL; CROSS-SECTIONAL AREA; DOUBLE-GATE; GATE VOLTAGES; INTEGRAL APPROACH; INVERSION CHARGES; LINEAR COMBINATION; MOSFET MODELING; MOSFETS; MULTIPLE-GATE; MULTIPLE-GATE (MG); NUMERICAL SIMULATIONS; POTENTIAL MODELING; QG MODEL; SG-MOSFET; SILICON CARBIDE DEVICES; SUB THRESHOLDS; SURROUNDING GATES; TRIPLE-GATE; UNIFIED MODELING; VOLUME INVERSION;

MOSFET DEVICES;

EID: 49249112674     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2008.926228     Document Type: Article

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