High performance AlGaN/GaN metal-insulator-semiconductor high electron mobility transistors fabricated using SiN/SiO2/SiN triple-layer insulators

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 45, Issue 4 B, 2006, Pages 3364-3367

  Endoh, Akira ^a   Yamashita, Yoshimi ^a   Hirose, Nobumitsu ^b   Hikosaka, Kohki ^a   Matsui, Toshiaki ^b   Hiyamizu, Satoshi ^c   Mimura, Takashi ^a  

^a FUJITSU LABORATORIES LTD   (Japan)

^b NATIONAL INSTITUTE OF INFORMATION AND COMMUNICATIONS TECHNOLOGY   (Japan)

^c OSAKA UNIVERSITY   (Japan)

Author keywords

AlGaN GaN; Cutoff frequency; Electron velocity; HEMT; High electron mobility transistor; Metal insulator semiconductor; MIS; SiN; SiO2; Transit time analysis

Indexed keywords

ETCHING; GALLIUM NITRIDE; HIGH ELECTRON MOBILITY TRANSISTORS; SILICA; SILICON NITRIDE; THIN FILMS;

ALGAN/GAN; CUTOFF FREQUENCY; ELECTRON VELOCITY; TRANSIT TIME ANALYSIS;

MIS DEVICES;

EID: 33646907954     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.45.3364     Document Type: Article

References (25)

1. Y.-F. Wu, A. Saxler, M. Moore, R. P. Smith, S. Sheppard, P. M. Chavarkar, T. Wisleder, U. K. Mishra and P. Parikh: IEEE Electron Device Lett. 25 (2004) 117.
2. Y. Okamoto, Y. Ando, K. Hataya, T. Nakayama, H. Miyamoto, T. Inoue, M. Senda, K. Hirata, M. Kosaki, N. Shibata and M. Kuzuhara: IEEE Trans. Microwave Theory Tech. 52 (2004) 2536.
3. H. Xing, Y. Dora, A. Chini, S. Heikman, S. Keller and U. K. Mishra: IEEE Electron Device Lett. 25 (2004) 161.
4. W. Saito, Y. Takada, M. Kuraguchi, K. Tsuda, I. Omura, T. Ogura and H. Ohashi: IEEE Trans. Electron Devices 50 (2003) 2528.
5. T. Egawa, H. Ishikawa, M. Umeno and T. Jimbo: Appl. Phys. Lett. 76 (2000) 121.
6. M. Akita, S. Kishimoto and T. Mizutani: IEEE Electron Device Lett. 22 (2001) 376.
7. B. E. Foutz, S. K. O'Leary, M. S. Shur and L. F. Eastman: J. Appl. Phys. 85 (1999) 7727.
8. M. V. Fischetti: IEEE Trans. Electron Devices 38 (1991) 634.
9. A. Endoh, Y. Yamashita, K. Ikeda, M. Higashiwaki, K. Hikosaka, T. Matsui, S. Hiyamizu and T. Mimura: Phys. Status Solidi C 0 (2003) 2368.
10. Y. Yamashita, A. Endoh, K. Ikeda, K. Hikosaka, T. Mimura, M. Higashiwaki, T. Matsui and S. Hiyamizu: J. Vac. Sci. Technol. B 23 (2005) 895.
11. T. Hashizume: Oyo Buturi 73 (2004) 333 [in Japanese].
12. S. C. Binari, K. Ikossi, J. A. Roussos, W. Kruppa, D. Park, H. B. Dietrich, D. D. Koleske, A. E. Wickenden and R. L. Henry: IEEE Trans. Electron Devices 48 (2001) 465.
13. Y. Ando, Y. Okamoto, H. Miyamoto, N. Hayama, T. Nakayama, K. Kasahara and M. Kuzuhara: IEDM Tech. Dig., 2001, p. 381.
14. Y. Awano, M. Kosugi, K. Kosemura, T. Mimura and M. Abe: IEEE Trans. Electron Devices 36 (1989) 2260.
15. E. M. Chumbes, J. A. Smart, T. Prunty and J. R. Shealy: IEEE Trans. Electron Devices 48 (2001) 416.
16. H. Matsumura: Jpn. J. Appl. Phys. 37 (1998) 3175.
17. A. S. Wakita, C.-Y. Su, H. Rohdin, H.-Y. Liu, A. Lee, J. Seeger and V. M. Robbins: J. Vac. Sci. Technol. B 13 (1995) 2725.
18. K. Shinohara, Y. Yamashita, K. Hikosaka, N. Hirose, M. Kiyokawa, T. Matsui, T. Mimura and S. Hiyamizu: Proc. Gallium Arsenide and Other Semiconductors Application Symp., 2000, p. 252.
19. Y. Yamashita, A. Endoh, K. Shinohara, M. Higashiwaki, K. Hikosaka, T. Mimura, S. Hiyamizu and T. Matsui: IEEE Electron Device Lett. 22 (2001) 367.
20. G. Dambrine, A. Cappy, F. Heliodore and E. Playez: IEEE Trans. Microwave Theory Tech. 36 (1988) 1151.
21. M. Higashiwaki and T. Matsui: Jpn. J. Appl. Phys. 44 (2005) L475.
22. N. Moll, M. R. Hueschen and A. Fischer-Colbrie: IEEE Trans. Electron Devices 35 (1988) 879.
23. M. Akita, S. Kishimoto, K. Maezawa and T. Mizutani: Electron. Lett. 36 (2000) 1736.
24. T. Inoue, Y. Ando, K. Kasahara, Y. Okamoto, T. Nakayama, H. Miyamoto and M. Kuzuhara: IEICE Trans. Electron. E86-C (2003) 2065.
25. A. Endoh, Y. Yamashita, K. Shinohara, M. Higashiwaki, K. Hikosaka, T. Mimura, S. Hiyamizu and T. Matsui: Jpn. J. Appl. Phys. 41 (2002) 1094.