|
|
Volumn 51, Issue 4, 2008, Pages 617-624
|
|
Formation of nanostructures in a heterojunction with a deeply located 2D electron gas via the method of high-voltage anodic-oxidation lithography using an atomic-force microscope
|
|
Author keywords
[No Author keywords available]
|
|
Indexed keywords
ATOMIC PHYSICS;
ATOMS;
CHEMICAL OXYGEN DEMAND;
ELECTRIC CONDUCTIVITY OF GASES;
ELECTRON GAS;
ELECTRONS;
GALLIUM;
HETEROJUNCTIONS;
LITHOGRAPHY;
MICROSCOPES;
NANOSTRUCTURES;
OXIDATION;
QUANTUM ELECTRONICS;
SEMICONDUCTOR QUANTUM DOTS;
TWO DIMENSIONAL;
2-D ELECTRON GAS;
HETERO JUNCTION;
HETEROSTRUCTURES;
HIGH VOLTAGES;
HIGH-MOBILITY;
LOCAL ANODIC OXIDATION;
OPERATING REGIMES;
PULSED VOLTAGES;
QUANTUM DOT;
ANODIC OXIDATION;
|
|
EID: 49149087846
PISSN: 00204412
EISSN: None
Source Type: Journal
DOI: 10.1134/S0020441208040209 Document Type: Article |
|
Times cited : (1)
|
|
References (19)
|
